?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com fmbs549 rev. b fmbs549 pnp low saturation transistor tm august 2006 fmbs549 pnp low saturation transistor features ? this device is designed with high cu rrent gain and low saturation voltage with collector currents up to 2a continous. ? sourced from process pb. absolute maximum ratings * t a = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes: 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulte d on applications involving pulsed or low duty cycle operations thermal characteristics * * device mounted on a 1 in 2 pad of 2 oz copper. symbol parameter value unit v ceo collector-emitter voltage -30 v v cbo collector-base voltage -35 v v ebo emitter-base voltage -5 v i c collector current - continuous - peak pulse current -1 -2 a a t j junction temperature 150 c t stg storage temperature range - 55 ~ 150 c symbol parameter value unit p d total device dissipation, by r ja 700 mw r ja thermal resistance, junction to ambient 180 c/w e c1 nc c c b supersot tm -6 single mark: .s1 pin #1
2 www.fairchildsemi.com fmbs549 rev. b fmbs549 pnp low saturation transistor electrical char acteristics* t c = 25c unless otherwise noted * dc item are tested by pulse test: pulse width 300us, duty cycle 2% symbol parameter conditions min. max. units off characteristics bv ceo collector-emitter breakdown voltage * i c = -10ma, i b = 0 -30 v bv cbo collector-base breakdown voltage i c = -100 a, i e = 0 -35 v bv ebo emitter-base breakdown voltage i e = -100 a, i c = 0 -5.0 v i cbo collector cutoff current v cb = -30v, i e = 0 v cb = -30v, i e = 0, t a = 100 c -100 -10 na a i ebo emitter cutoff current v eb = -4.0v, i c =0 -100 na on characteristics * h fe dc current gain v ce = -2.0v, i c = -50ma v ce = -2.0v, i c = -500ma v ce = -2.0v, i c = -1a v ce = -2.0v, i c = -2a v ce = -0.8v, i c = -500ma 70 100 80 40 100 300 v ce (sat) collector-emitter saturation voltage i c = -250ma, i b = -25ma i c = -500ma, i b = -50ma i c = -1a, i b = -100ma i c = -2a, i b = -200ma -200 -350 -500 -750 mv mv mv mv v be (sat) base-emitter saturation voltage i c = -1a, i b = -100ma -1.25 v v be (on) base-emitter on voltage i c = -1a, v ce = -2.0v -1.0 v small signal characterics f t current gain bandwidth product i c = -100ma, v ce = -5v, f = 100mhz 100 mhz c ob output capacitance v cb = -10v, i e = 0, f = 1mhz 25 pf
3 www.fairchildsemi.com fmbs549 rev. b fmbs549 pnp low saturation transistor typical characteristics 012345 0 100 200 300 400 500 600 700 800 4ma 3.5ma 3ma 2.5ma 1ma ib=0.5ma 2ma 1.5ma collector current, ic [ma] collector-emitter voltage, vce[v] collector- emitter voltage vs collector current current gain vs collector current 0.0001 0.001 0.01 0.1 1 10 0 100 200 300 400 500 600 i - collector current (a) h - current gain c fe 25c 125c - 40c v = 2.0v ce base-emitter on voltage vs collector current 0.0001 0.001 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 i - collector current (a) v - base-emitter on voltage (v) c beon 25 c - 40 c 125 c v = 2.0v ce base-emitter saturation voltage vs collector current 0.001 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 i - collector current (a) v -base-emitter saturation voltage(v) c besat 25 c - 40 c 125 c = 1 0 collector-emitter saturation voltage vs collector current 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 i - collector current (a) v - collector-emitter voltage (v) c cesat - 40c 25c 125c = 1 0 input/output capacitance vs reverse bias voltage 0.1 0.5 1 10 20 50 100 0 20 40 60 80 100 120 v - collector voltage (v) capacitance (pf) ce v = 2.0v ce c ibo c obo f = 1.0mhz
4 www.fairchildsemi.com fmbs549 rev. b fmbs549 pnp low saturation transistor package dimensions dimensions in millimeters supersot tm -6
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intend ed to be an exhaustive list of all such trademarks. fmbs549 pnp low saturation transistor disclaimer fairchild semiconductor reserves the righ t to make changes without further notice to any products herein to improve reliability, functio n or design. fairchild does no t assume any liability arising out of the application or use of any product or circuit described herein;neither does it convey any li cense under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, spe- cifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in th e labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reason ably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the des ign specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final s pecifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specific ations on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? unifet? vcx? wire? acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fast ? fastr? fps? frfet? across the board. around the world.? the power franchise ? programmable active droop? rev. i20 5 www.fairchildsemi.com fmbs549 rev. b fmbs549 pnp low saturation transistor
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